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Same model may have multiple batches, images only for reference.
IRFS59N10DTRRP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFS59N10DTRRP

Part No IRFS59N10DTRRP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A D2PAK
Datasheet
IRFS59N10DTRRP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2450pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 35.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047152-IRFS59N10DTRRP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS59N10DTRRP CAD Model

Description

The Infineon Technologies IRFS59N10DTRRP is a N-Channel MOSFET with a maximum power dissipation of 3.8W (Ta), 200W (Tc) and a drain-source breakdown voltage of 100V.

  • Continuous Drain Current: 59A (Tc)
  • Rds On (Max) @ Id,Vgs: 25 mOhm @ 35.4A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Gate Charge (Max): 114nC @ 10V
  • Input Capacitance (Max): 2450pF @ 25V
  • Package: D2PAK
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 175°C (TJ)

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