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UNR9111G0L

Name: UNR9111G0L
Brand: Panasonic
SKU: 1102376
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	UNR9111G0L
Manufacturer	Panasonic
Catalog	RF Transistors (BJT)
Description	TRANS PREBIAS PNP 125MW SSMINI3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 125 mW Surface Mount SSMini3-F3
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Panasonic Electronic Components
Package	Tape & Reel
Product Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	80 MHz
Power - Max	125 mW
Mounting	SMD (SMT)
Package / Case	SC-89, SOT-490
Supplier Device Package	SSMini3-F3
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	UNR9111G0LTR,UNR9111G0LCT,UNR9111G0LDKR
Standard Package	3,000
Win Source Part Number	1102376-UNR9111G0L
Ultra Librarian 3D Model	Ultra Librarian UNR9111G0L CAD Model

Alternative Products

Description

The Panasonic Electronic Components UNR9111G0L is a pre-biased PNP transistor designed for use in various electronic applications.

Collector-emitter breakdown voltage: 50V
Maximum current collector: 100mA
Low collector-emitter saturation voltage: 250mV @ 300μA and 10mA
DC current gain (hFE): 35 @ 5mA and 10V
Package: SC-89, SOT-490 packaged transistor
Suitable for: use in a wide range of applications, including audio amplifiers, switching power supplies, and motor control circuits.
Operating temperature range: -55°C to 150°C

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