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STP6N65M2

Part No STP6N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series MDmesh™
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP6N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-15040-5, -497-15040-5
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898338-STP6N65M2
Ultra Librarian 3D Model Ultra Librarian STP6N65M2 CAD Model

Description

STP6N65M2 - N-channel 650 V, 1.2 Ω, 6 A MDmesh™ M2 Power MOSFET by STMicroelectronics

The STP6N65M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed with the innovative MDmesh™ M2 technology. This advanced technology is based on an innovative proprietary vertical structure, which enables the MOSFET to achieve an optimal balance of low on-resistance, high blocking voltage, and fast switching performance, making it particularly suitable for high-efficiency power conversion applications.

With a breakdown voltage of 650 V, the STP6N65M2 is well-suited for high voltage applications that require reliable and robust performance. Its low on-resistance of just 1.2 Ω minimizes conduction losses, thereby improving the overall efficiency of the system in which it is deployed. The device is capable of handling continuous currents up to 6 A, making it a versatile component for a variety of power management tasks.

The STP6N65M2 comes in a TO-220 package, which is widely recognized for its ease of handling and mounting, as well as its good thermal performance. This makes it an excellent choice for designers looking to simplify the assembly process while maintaining high reliability in their applications.

Key features of the STP6N65M2 include:

  • Max RDS(on) of 1.2 Ω at VGS = 10 V
  • Low gate charge and input capacitance for efficient switching
  • Fast recovery diode for reduced switching losses
  • 100% avalanche tested to ensure ruggedness
  • High dv/dt capability for reliability in harsh conditions

Applications for this MOSFET include a wide range of power supply designs, such as switched-mode power supplies (SMPS), LED lighting, high-efficiency DC-DC converters, and motor control circuits. Its robustness and efficiency also make it suitable for renewable energy applications, such as solar inverters and wind turbine power converters.

STMicroelectronics' commitment to quality and innovation is reflected in the STP6N65M2, offering engineers a reliable and efficient solution for their high-voltage power conversion needs. With its combination of performance, efficiency, and reliability, the STP6N65M2 is a solid choice for your next power electronics project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8740 $61.1800
165+ $0.7172 $118.3380
250+ $0.6948 $173.7000
345+ $0.6724 $231.9780
445+ $0.6500 $289.2500
595+ $0.5827 $346.7065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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