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Same model may have multiple batches, images only for reference.
G20N03D2
Same model may have multiple batches, images only for reference.

G20N03D2

Part No G20N03D2
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DFN (2x2)
Package / Case 6-WDFN Exposed Pad
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376861-G20N03D2
Ultra Librarian 3D Model Ultra Librarian G20N03D2 CAD Model

Description

The 1376861-G20N03D2 is a N-channel MOSFET transistor manufactured by Goford Semiconductor.

  • Category: Discrete Semiconductor Products
  • Operating Temperature: -55°C to 150°C
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN (2x2)
  • Vdss (Drain to Source Voltage): 30V
  • Id (Continuous Drain Current): 9A
  • Qg (Gate Charge): 20 nC @ 10V
  • Power Dissipation (Max): 1.5W
  • Product Status: Active

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