The STPSC10TH13TI is a high-performance silicon carbide (SiC) power Schottky diode designed by STMicroelectronics, a global semiconductor leader. This diode is part of ST's SiC diode family that offers a range of benefits for a variety of power applications. It is well-suited for systems that demand efficiency, compactness, and high temperature operation.
Key Features
- No Reverse Recovery Charge: The diode features no reverse recovery charge, which significantly reduces switching losses and enhances system efficiency, especially in high-frequency applications.
- High Surge Capability: With its robust design, the STPSC10TH13TI can handle high surge currents, making it reliable for applications with demanding power surge requirements.
- Temperature Resilience: The device can operate at high junction temperatures, up to 175°C, allowing for greater thermal design flexibility and reduced cooling requirements.
- Low Leakage Current: It has a very low leakage current, which contributes to its high efficiency and helps to minimize power loss when the diode is in the off state.
- High Forward Surge Capability: The diode's high forward surge capability ensures reliability under extreme conditions, such as inrush currents at turn-on.
Applications
The STPSC10TH13TI is ideal for a wide range of applications, including:
- Power supplies and adapters
- Solar inverters
- Switching power supplies
- Motor drives
- Power factor correction circuits
Product Specifications
Parameter
Value
Diode Configuration
Single
Repetitive Peak Reverse Voltage (V<sub>RRM)
1200V
Average Forward Current (I<sub>F(AV))
10A
Package/Case
TO-220AC
The STPSC10TH13TI is a testament to STMicroelectronics' commitment to providing advanced power components that enhance the performance and efficiency of modern electronic systems.
