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VND10N06-E

Part No VND10N06-E
Manufacturer STMicroelectronics
Catalog PMIC - Power Distribution Switches, Load Drivers
Description IC PWR DRIVER N-CHANNEL 1:1 DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer STMicroelectronics
Series OMNIFET™, VIPower™
Package Tube
Part Status Obsolete
Supply Voltage Not Required
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name VND10
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-19739, VND10N06-E-ND
Quantity per package 75
Popularity High
Supply and Demand Status Balance
Win Source Part Number 938719-VND10N06-E
Ultra Librarian 3D Model Ultra Librarian VND10N06-E CAD Model

Description

Product Overview: VND10N06-E MOSFET from STMicroelectronics

The VND10N06-E is a robust N-channel enhancement-mode Power MOSFET produced by the renowned manufacturer STMicroelectronics. This high-performance semiconductor device is a part of the OMNIFET series, which is known for its fully autoprotected power MOSFETs. The VND10N06-E is designed to deliver efficient power control and management in a wide range of applications, making it a versatile component for designers and engineers.

Key Features

  • High Current Capability: The VND10N06-E is capable of handling continuous current up to 10A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a drain-source voltage (Vds) of 60V, this MOSFET can be used in circuits that experience higher voltages, providing reliable performance and protection against voltage spikes.
  • Thermal Protection: The device includes an integrated over-temperature protection feature that shuts down the MOSFET to prevent damage from excessive heat, ensuring a longer operational lifespan.
  • Current Limiting: Built-in current limiting functions protect the device and the load from overcurrent conditions.
  • Low On-resistance: The VND10N06-E offers a low RDS(on) value, which minimizes conduction losses and improves overall efficiency.
  • ESD Protection: Electrostatic discharge protection is included to safeguard the MOSFET from sudden voltage spikes caused by static electricity.

Applications

The VND10N06-E is particularly well-suited for automotive and industrial applications, where reliability and durability are of paramount importance. It can be used in:

  • Automotive systems such as motor drives, lamp drivers, and power switches
  • DC-DC converters and power management modules
  • Relay and solenoid drivers
  • Robotic and servo control systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products, and the VND10N06-E is no exception. It is designed to meet the stringent requirements of the automotive industry, ensuring reliability and performance under harsh conditions. The device is also RoHS compliant, adhering to environmental standards regarding the restriction of hazardous substances.

For electronic designs requiring a robust, high-performance power MOSFET, the VND10N06-E from STMicroelectronics stands out as a solid choice. Its comprehensive protection features and high current handling capabilities make it a go-to component for demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,842 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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