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Same model may have multiple batches, images only for reference.
2SA1244-O(Q)
Same model may have multiple batches, images only for reference.

2SA1244-O(Q)

Part No 2SA1244-O(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Transistor PNP 50V 5A Pw-mold
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-252-3
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 400 mV
Max Collector Current 5 A
Max Power Dissipation 1 W
Mount Surface Mount
Packaging Bulk
RoHS Compliant
Transition Frequency 60 MHz
Win Source Part Number 1137611-2SA1244-O(Q)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1244-O(Q) CAD Model

Description

The Toshiba Semiconductor and Storage RF Transistor (BJT) is a surface mount TO-252-3 transistor from Toshiba Semiconductor and Storage with a medium popularity.

  • Collector Emitter Breakdown Voltage: 50V
  • Collector Emitter Voltage (VCEO): 400mV
  • Maximum Power Dissipation: 1W
  • Maximum Collector Current: 5A
  • Transition Frequency: 60MHz
  • RoHS: compliant
  • Supply and Demand Status: limited

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