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Same model may have multiple batches, images only for reference.
RN1906FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1906FE,LF

Part No RN1906FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1906FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 097103-RN1906FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1906FE,LF CAD Model

Description

The RN1906FE,LF is a dual pre-biased NPN transistor produced by Toshiba Semiconductor and Storage.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 80 @ 10mA and 5V
  • Maximum Power Dissipation: 100mW
  • Designed for use in a variety of applications, including amplifiers, switching circuits, and oscillators.
  • Supply and Demand Status: sufficient
  • Packaged in: an ES6 case/package

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Quantity Unit Price Ext. Price
65+ $0.9506 $61.7890
150+ $0.7796 $116.9400
230+ $0.7554 $173.7420
320+ $0.7311 $233.9520
410+ $0.7069 $289.8290
550+ $0.6341 $348.7550
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Availability: 143,700 pieces
MOQ: 65 pcs
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