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Same model may have multiple batches, images only for reference.
RN2306,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2306,LF

Part No RN2306,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W USM
Datasheet
RN2306,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 098221-RN2306,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2306,LF CAD Model

Description

The RN2306,LF is a PNP-Pre-Biased transistor produced by Toshiba Semiconductor and Storage.

  • Product Category: Discrete Semiconductor Products
  • Popularity: medium popularity
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Frequency Transition: 200MHz
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Mounting: designed for SMD (SMT) mounting
  • Case/Package: USM case/package

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Quantity Unit Price Ext. Price
370+ $0.1363 $50.4310
895+ $0.1119 $100.1505
1,385+ $0.1084 $150.1340
1,910+ $0.1049 $200.3590
2,470+ $0.1014 $250.4580
3,305+ $0.0909 $300.4245
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