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Same model may have multiple batches, images only for reference.
SSM3K56FS,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K56FS,LF

Part No SSM3K56FS,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.8A SSM
Datasheet
SSM3K56FS,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1nC @ 4.5V
Max Input Capacitance 55pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 235 mOhm @ 800mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SSM
Dimension SC-75, SOT-416
Win Source Part Number 1102309-SSM3K56FS,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K56FS,LF CAD Model

Description

The SSM3K56FS,LF MOSFET from Toshiba Semiconductor and Storage is a N-Channel polarity component.

  • Maximum Power Dissipation: 150mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 800mA (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 800mA, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 1nC @ 4.5V
  • Maximum Input Capacitance: 55pF @ 10V
  • Package: SSM package with SC-75, SOT-416 dimensions
  • Applications: Discrete semiconductor products
  • Supply and Demand Status: Balanced

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