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Same model may have multiple batches, images only for reference.
SSM6N36FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N36FE(TE85L,F)

Part No SSM6N36FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.5A ES6
Datasheet
SSM6N36FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 630 mOhm @ 200mA, 5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.23nC @ 4V
Max Input Capacitance 46pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 042874-SSM6N36FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N36FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 2 N-Channel FET is a dual logic level gate device that is perfect for discrete semiconductor products.

  • Gate Type: Dual logic level gate
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 150mW
  • Case/Package: ES6 (1.6x1.6)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 500mA
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge @ 4V: 1.23nC
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 312,286 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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