The Toshiba Semiconductor and Storage 2 N-Channel FET is a dual logic level gate device that is perfect for discrete semiconductor products. It is SMD (SMT) mounted and has a maximum power dissipation of 150mW. The ES6 (1.6x1.6) case/package makes it easy to mount this device. It has a drain-source breakdown voltage of 20V and a continuous drain current of 500mA at 25°C. The gate-source threshold voltage is 1V at 1mA, with a maximum gate charge of 1.23nC at 4V. The supply and demand status is sufficient.