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IRFI614GPBF

Part No IRFI614GPBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 250V 2.1A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 2.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 23W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187645-IRFI614GPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI614GPBF CAD Model

Description

The IRFI614GPBF from Vishay Siliconix is a high-quality MOSFET transistor that is designed to provide reliable performance in a wide range of applications.

  • Maximum Drain-Source Breakdown Voltage: 250V
  • Maximum Continuous Drain Current: 2.1A
  • Ideal for: use in power supplies, motor control circuits, and other applications that require high-performance MOSFET transistors
  • Package: through-hole package
  • Suitable for: use in both commercial and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1496 $63.2280
125+ $0.9433 $117.9125
190+ $0.9138 $173.6220
265+ $0.8844 $234.3660
340+ $0.8549 $290.6660
455+ $0.7665 $348.7575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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