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SI2308DS-T1-E3

Part No SI2308DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 110079-SI2308DS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2308DS-T1-E3 CAD Model

Description

The SI2308DS-T1-E3 is an N-Channel MOSFET from Vishay, designed for low voltage, high current switching applications. It's commonly used in portable devices and power management circuits where efficiency and size are critical.

Applications

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Charging Circuits
  • LED Drivers

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation, resulting in higher efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Logic Level Gate Drive: Allows direct control from microcontrollers and other logic devices.
  • TrenchFET® Power MOSFET: Vishay's advanced trench technology for improved performance.
  • Halogen-Free: Environmentally friendly and RoHS compliant.

Benefits

  • Improved Efficiency: Lower RDS(on) minimizes power dissipation, leading to higher efficiency in power conversion.
  • Extended Battery Life: Reduced power consumption extends battery life in portable devices.
  • Simplified Circuit Design: Logic level gate drive simplifies interfacing with control circuitry, reducing component count.
  • Reduced Heat Sink Requirements: Lower power dissipation reduces the need for bulky heat sinks, saving space and cost.
  • Environmentally Friendly: Halogen-free construction promotes sustainability.

Additional Details

The SI2308DS-T1-E3 typically comes in a SOT-23 package. The drain-source voltage (VDS) is generally around 20V, and the continuous drain current (ID) is often in the range of 5A to 8A, depending on the operating conditions and thermal management. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The 'E3' suffix indicates that the device is RoHS compliant and lead-free. The 'T1' usually indicates tape and reel packaging. This MOSFET is optimized for low voltage applications where efficiency is critical. Its low on-resistance minimizes voltage drop and power dissipation during switching. For accurate design, refer to the official Vishay datasheet, as electrical characteristics vary with temperature, voltage, and other operating conditions. Proper thermal management is crucial to ensure the device operates within its safe operating area. It's suitable for use in battery-powered devices, providing efficient switching and minimizing energy loss.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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