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SUP90N04-3m3P

Part No SUP90N04-3m3P
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 40 V (D-S) MOSFET
Sample
Rohs State rohs
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Manufacturer Vishay
Win Source Part Number 1262592-SUP90N04-3m3P
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUP90N04-3m3P CAD Model

Description

The SUP90N04-3m3P is an N-Channel 40 V MOSFET from Vishay Siliconix, designed for high-efficiency power conversion and load switching applications. This MOSFET features an ultra-low on-resistance, minimizing conduction losses and maximizing efficiency. It is available in a PowerPAK® SO-8 package, offering a small footprint for space-constrained applications while ensuring excellent thermal performance.

Applications

  • Synchronous Rectification
  • DC-DC Conversion
  • Power Management in Portable Devices
  • Battery Management Systems
  • Motor Control

Features

  • Ultra-Low On-Resistance: Reduces conduction losses to an absolute minimum.
  • Fast Switching Speed: Enables efficient operation at high frequencies.
  • Small Footprint: PowerPAK® SO-8 package saves valuable board space.
  • 40V Drain-Source Voltage: Suitable for a range of low-voltage applications.
  • Logic Level Gate Drive: Simplifies drive circuitry and improves compatibility with microcontrollers.

Benefits

  • Unmatched Efficiency: Ultra-low on-resistance minimizes power dissipation and maximizes system efficiency.
  • Compact Design: Small PowerPAK® SO-8 package allows for high-density layouts.
  • Simplified Drive Circuitry: Logic-level gate drive makes integration easier.
  • Reliable Performance: Robust design ensures stable operation in demanding environments.
  • Improved Thermal Performance: Efficient heat dissipation due to the PowerPAK® SO-8 package.

Additional Details

The SUP90N04-3m3P features an exceptionally low on-resistance (RDS(on)) of typically 3.3 mΩ at a gate-source voltage (VGS) of 10 V and a drain current (ID) of 25 A. At a VGS of 4.5 V and a drain current (ID) of 20 A, the typical RDS(on) is slightly higher but still very low. The gate threshold voltage typically falls between 1 V and 2.5 V. The device is designed to operate within a temperature range of -55 °C to +175 °C. Its thermal resistance from junction to ambient is approximately 50 °C/W. The device's input capacitance is around 2000 pF, and its gate charge is around 20 nC. This MOSFET is designed to provide an exceptionally efficient and reliable solution for power management applications where minimizing power loss is critical.

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