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SI1967DH-T1-BE3

Part No SI1967DH-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs 490mOhm @ 910mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
Power - Max 740mW (Ta), 1.25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Base Product Number SI1967
Other Names 742-SI1967DH-T1-BE3TR,742-SI1967DH-T1-BE3CT,742-SI1967DH-T1-BE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278488-SI1967DH-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI1967DH-T1-BE3 CAD Model

Description

The SI1967DH-T1-BE3 is a dual P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 1A (Ta), 1.3A (Tc)
  • Maximum Rds On @ Id, Vgs: 490mOhm @ 910mA, 4.5V
  • Maximum Gate Charge: 4nC @ 10V
  • Input Capacitance: 110pF @ 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power: 740mW (Ta), 1.25W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4049 $50.6125
265+ $0.3788 $100.3820
415+ $0.3658 $151.8070
590+ $0.3396 $200.3640
770+ $0.3266 $251.4820
960+ $0.3135 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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