The Vishay Siliconix SIHA690N60E-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id): 4.3A (Tc) @ 25°C
• Maximum Rds On: 700mOhm @ 2A, 10V
• Maximum Vgs(th): 5V @ 250µA
• Power Dissipation (Max): 29W (Tc)
• Mounting Type: Through-Hole
• Package: TO-220-3 Full Pack
• Gate Charge (Qg) (Max): 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
• Temperature Range: -55°C ~ 150°C (TJ)
• ECCN: EAR99
• MSL Level: 1 (Unlimited)