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SQS140ENW-T1_GE3

Part No SQS140ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE N-CHANNEL 40 V (D-S) / N-Channel 40 V 214A (Tc) 197W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.53mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3111 pF @ 25 V
Power Dissipation (Max) 197W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerPAK® 1212-8SLW
Package / Case PowerPAK® 1212-8SLW
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350857-SQS140ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS140ENW-T1_GE3 CAD Model

Description

The SQS140ENW-T1_GE3 from Vishay Siliconix is a MOSFET (Metal Oxide) with an N-channel FET type.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 40V
  • Power Dissipation (Max): 197W (Tc)
  • Package: PowerPAK® 1212-8SLW
  • Temperature Range: -55°C to 175°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Current Continuous Drain (Id) @ 25°C: 214A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.2762 $50.9334
17+ $5.9702 $101.4934
26+ $5.7836 $150.3736
36+ $5.5971 $201.4956
47+ $5.4105 $254.2935
62+ $4.8508 $300.7496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,350 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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