The AP04N60H is a 600V, 4A N-Channel power MOSFET from Advanced Power Electronics Corp. It's designed for high-voltage, high-speed switching applications, offering low on-resistance and gate charge for efficient operation. This MOSFET is commonly used in power supplies, LED lighting, and motor control circuits.

Applications:

• Power Supplies (SMPS)
• LED Lighting
• Motor Control
• DC-DC Converters
• Adapters

Features:

• High Voltage: 600V Drain-Source Voltage (Vds)
• Low On-Resistance: Low RDS(on) for reduced power losses
• Fast Switching Speed: Minimizes switching losses
• Low Gate Charge: Improves switching efficiency
• Avalanche Rated: Robust performance under avalanche conditions
• Pb-Free Lead Plating: Environmentally friendly

Benefits:

• High Efficiency: Reduced power dissipation due to low on-resistance and gate charge.
• Improved Reliability: Avalanche rating ensures robust operation under stress.
• Simplified Design: Fast switching speed simplifies design considerations for high-frequency applications.
• Compact Size: Available in a through-hole package for easy mounting.
• Environmentally Compliant: Pb-free plating meets environmental regulations.

Technical Specifications:

The AP04N60H features a drain-source voltage (Vds) of 600V, a continuous drain current (Id) of 4A, and a pulsed drain current (Idm) of 12A. The gate-source voltage (Vgs) is ±30V. The typical on-resistance (RDS(on)) is 1.9 Ohms at Vgs = 10V. It is available in a TO-251/TO-252 package. The operating junction temperature ranges from -55°C to +150°C. The gate charge (Qg) is typically 8.5 nC.

The AP04N60H is designed to provide efficient and reliable performance in a variety of power switching applications. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it a suitable choice for designers seeking to optimize power supply efficiency and reduce overall system size.