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APM2014NU

Part No APM2014NU
Manufacturer Anpec
Catalog Hard To Find
Description N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Anpec
Win Source Part Number 1146439-APM2014NU
Manufacturer Homepage www.anpec.com.tw
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APM2014NU CAD Model

Description

The APM2014NU is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Anpec Electronics. It's designed for low-voltage, high-speed switching applications, providing efficient power management and control in a compact package.

Applications

  • DC-DC Converters: Efficient switching in power supplies and voltage regulators.
  • Load Switching: Controlling power to various loads in electronic circuits.
  • Power Management in Portable Devices: Optimizing power consumption in battery-powered applications.
  • Motor Control: Driving small DC motors in various applications.
  • Backlight Inverters: Providing switching functionality in display backlight systems.

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • High Switching Speed: Enables efficient operation at high frequencies.
  • Logic Level Gate Drive: Can be driven directly by logic-level signals.
  • Surface Mount Package: Compact package for efficient board space utilization.
  • Lead-Free and RoHS Compliant: Environmentally friendly construction.

Benefits

  • Improved Energy Efficiency: Low RDS(on) reduces power dissipation and improves efficiency.
  • Faster Switching: High switching speed allows for higher frequency operation.
  • Simplified Circuit Design: Logic level gate drive simplifies interfacing with control circuitry.
  • Compact Solution: Small package size saves board space in space-constrained applications.
  • Environmentally Friendly: RoHS compliance ensures minimal environmental impact.

Additional Details

The APM2014NU is typically available in a surface-mount package, such as a SOT-23 or similar. The low on-resistance minimizes power losses during conduction, which is crucial for efficient power management. The logic level gate drive allows the MOSFET to be controlled directly by microcontrollers or other logic devices without the need for additional driver circuitry. Key specifications, including drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and on-resistance (RDS(on)), are detailed in the product datasheet.

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