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CY14V104NA-BA45XIT

Part No CY14V104NA-BA45XIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 256kx16(4Mb)
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455447-CY14V104NA-BA45XIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR)
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Ultra Librarian 3D Model Ultra Librarian CY14V104NA-BA45XIT CAD Model

Description

The CY14V104NA-BA45XIT is a high-performance non-volatile static random-access memory (nvSRAM) device from Cypress, featuring a storage capacity of 4 megabits organized as 256K words by 16 bits. This nvSRAM component leverages the benefits of SRAM for fast access times and a non-volatile element to preserve data in the absence of power, making it an ideal solution for critical data storage requirements in industrial, automotive, and medical applications. The device integrates unique QuantumTrap technology, ensuring data reliability over extensive periods without power. With its robust design, the CY14V104NA-BA45XIT also offers a high level of data security and integrity, supporting a wide range of operating temperatures, making it suitable for harsh environments. Its package and interface are designed for easy integration into various system architectures, offering flexibility for designers.

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