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S34MS04G204BHI010

Part No S34MS04G204BHI010
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description 4Gb(512MB) NAND Flash SLC
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1453591-S34MS04G204BHI010
Manufacturer Cypress Semiconductor Corp
Package Tray;Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-BGA (11x9)
Ultra Librarian 3D Model Ultra Librarian S34MS04G204BHI010 CAD Model

Description

The S34MS04G204BHI010 is a 4Gb (512MB) NAND Flash memory component designed by Cypress/Spansion, now part of Infineon Technologies following the acquisition. This specific model falls into the Single-Level Cell (SLC) category, which means that each memory cell stores a single bit of information, offering higher endurance, faster read and write capabilities, and greater data reliability compared to Multi-Level Cell (MLC) technologies. It is tailored for applications requiring high performance and longevity, such as industrial automation, automotive electronics, and critical system boot processes. The part's resilience to intense workloads and environmental conditions, combined with a well-established track record of Cypress/Spansion in producing robust memory solutions, ensures that it meets the stringent requirements for professional and industrial applications. Furthermore, its integration flexibility facilitates design-in processes for a broad range of electronic systems.

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