Product Overview: Diodes Incorporated 1N5821-T
The 1N5821-T is a robust Schottky barrier rectifier diode from Diodes Incorporated, designed for high-efficiency power supply applications. This diode is built to handle a continuous forward current of 3A with low power loss and high reliability, making it an ideal choice for a variety of electronic circuits.
Key Features
- High Current Capability: The 1N5821-T can sustain a maximum average forward rectified current of 3A, suitable for high-current applications.
- Low Forward Voltage Drop: With a forward voltage drop typically under 0.55V, this diode ensures minimal power loss, enhancing the overall efficiency of the system.
- High Surge Capacity: It can withstand surge currents, which is critical for protecting circuits from voltage spikes and surges.
- Fast Switching Speed: The device's Schottky barrier design allows for quick switching capabilities, which is beneficial for high-frequency operations.
- Guard Ring Die Construction: This feature provides transient over-voltage protection, increasing the reliability and longevity of the diode.
Electrical Characteristics
Parameter |
Value |
Forward Continuous Current (IF) |
3A |
Maximum Recurrent Peak Reverse Voltage (VRRM) |
30V |
Forward Voltage Drop (VF) @ IF |
0.55V (Typical) |
Operating Junction Temperature (TJ) |
-65°C to 125°C |
Applications
The 1N5821-T is versatile and can be used in a wide range of applications, including:
- Low voltage, high-frequency inverters
- Free-wheeling diodes
- DC/DC converters
- Power supply circuits
- Automotive applications
With its exceptional performance and reliability, the 1N5821-T Schottky barrier rectifier diode from Diodes Incorporated is an excellent choice for designers looking for a component that offers both efficiency and durability.