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2N7002W-7

Part No 2N7002W-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | MOSFET N-CH 60V 115MA SOT-323
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Tape (CT)
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 115mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 7.5Ohm at 50mA, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Power Dissipation (Maximum) 200mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-323
Manufacturer Package SC-70, SOT-323
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124253-2N7002W-7
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002W-7 CAD Model

Description

Product Overview: 2N7002W-7 from Diodes Incorporated

The 2N7002W-7 is a high-performance, small-signal N-Channel MOSFET from Diodes Incorporated, renowned for its efficiency and reliability in a wide range of applications. This MOSFET is designed to deliver fast switching with low on-resistance and is housed in a compact SOT-323 package, making it ideal for space-constrained applications.

Key Features

  • Low On-Resistance: The device features a low on-state resistance, which minimizes losses and improves efficiency, making it suitable for high-performance power management applications.
  • High-Speed Switching: With its fast switching capabilities, the 2N7002W-7 is optimized for high-speed circuit operation, contributing to the reduction of switching losses.
  • SOT-323 Package: The small surface-mount package allows for a compact design footprint, which is critical in portable electronics and other applications where space is at a premium.
  • Gate Protection: Integrated gate protection diodes help to safeguard the device from electrostatic discharge (ESD) events, enhancing its robustness and reliability in the field.
  • Versatile Voltage Range: This MOSFET can handle a continuous drain current of 115 mA and is suitable for applications with a drain-source voltage up to 60V, making it versatile for a variety of circuits.

Applications

The 2N7002W-7 is used in a variety of applications, particularly where power efficiency and space savings are crucial. Some common applications include:

  • Power Management Circuits
  • Load Switching
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Circuits
  • Portable Electronic Devices

Reliability and Quality

Diodes Incorporated is committed to providing high-quality components. The 2N7002W-7 MOSFET is manufactured with rigorous standards, ensuring reliable performance in a range of environmental conditions. With its excellent thermal characteristics and robustness, the 2N7002W-7 is a solid choice for designers looking to enhance the efficiency and longevity of their electronic products.

For detailed specifications and application notes, designers are encouraged to consult the datasheet provided by Diodes Incorporated. The 2N7002W-7 is not only a testament to the company's dedication to innovation but also to its commitment to supporting the needs of modern electronic designs.

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