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BC857BV-7

Part No BC857BV-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description Trans GP BJT PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R / TRANS 2PNP 45V 0.1A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 400mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 104652-BC857BV-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BC857BV
Introduction Date October 03, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BC857BV-7 CAD Model

Description

Diodes Incorporated BC857BV-7 PNP Transistor

The BC857BV-7 is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplifier and switching applications. This device is part of the BC857 series, which is known for its reliability and versatility across various electronic circuits. The BC857BV-7 is housed in a compact SOT-23 package, making it suitable for space-constrained applications.

With its PNP configuration, the BC857BV-7 is adept at providing a high current gain (hFE) with a low collector-emitter saturation voltage, ensuring efficient operation even at low voltages. This makes it an excellent choice for portable and battery-powered devices where power conservation is critical.

Key features of the BC857BV-7 include:

  • Collector-Emitter Voltage (VCEO) of -45V, providing a good margin for various circuit designs.
  • Collector Current (IC) of -100mA, enabling the transistor to handle moderate current loads.
  • Power Dissipation (PD) of 250mW, ensuring the device can manage a fair amount of power without overheating.
  • High current gain bandwidth product (fT), offering excellent amplification characteristics for high-frequency applications.
  • Low noise figure, which is ideal for audio amplifiers and signal processing where maintaining signal integrity is crucial.
  • RoHS compliant and "Green" device, reflecting Diodes Incorporated's commitment to environmentally friendly manufacturing practices.

The BC857BV-7 transistor is widely used in a variety of applications, including but not limited to, signal amplification, switching operations, and as a driver for low-power LEDs. Its ability to switch and amplify efficiently makes it a staple in the design of consumer electronics, telecommunication systems, and control modules.

Engineers and designers choose the BC857BV-7 for its consistent performance, integration ease due to its industry-standard SOT-23 footprint, and the reputation of Diodes Incorporated for producing reliable semiconductor products. Whether for prototyping or mass production, the BC857BV-7 is an excellent choice for a wide range of electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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