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DDTC122LE-7-F

Part No DDTC122LE-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description NPN PRE-BIASED 100 mA SOT-523 SURFACE MOUNT TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 220
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 56 @ 10mA, 5V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Maximum) 500nA
Frequency - Transition 200MHz
Power - Max 150mW
Mounting SMD
Package SOT-523
Manufacturer Package SOT-523
Win Source Part Number 1167001-DDTC122LE-7-F
Manufacturer Homepage www.diodes.com
Family Name DDTC122LE
Introduction Date October 13, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DDTC122LE-7-F CAD Model

Description

Introducing the DDTC122LE-7-F Transistor from Diodes Incorporated

The DDTC122LE-7-F is a high-performance, surface-mount NPN pre-biased small signal transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This product is part of the pre-biased transistor family that combines a single-stage NPN transistor and a resistor network in a compact SOT-523 package, making it an ideal choice for space-constrained applications.

The DDTC122LE-7-F is specifically engineered to simplify circuit design and minimize component count by integrating the biasing resistors required for the operation of the NPN transistor. This feature provides convenience to designers and helps in reducing the overall system size, which is particularly beneficial for portable and battery-powered devices where space and power are at a premium.

This transistor is characterized by its low VCE(sat) voltage, which ensures low power loss and higher efficiency during operation. Such efficiency is critical in power management circuits, as well as in switching and amplification applications. The DDTC122LE-7-F also boasts excellent hFE linearity, which makes it suitable for applications that require consistent performance over a wide range of conditions.

Key specifications of the DDTC122LE-7-F include:

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 150mW
  • Resistor Ratios: R1/R2 = 47KΩ/47KΩ
  • High Current Gain Bandwidth Product (fT)
  • RoHS compliant and "Green" Device

With its built-in bias resistor network, the DDTC122LE-7-F allows for a reduction in board space which can be up to 50% compared to conventional discrete solutions. Its applications range from digital logic inputs and signal processing to power management in consumer electronics, telecommunications, and industrial equipment.

Diodes Incorporated's commitment to quality ensures that the DDTC122LE-7-F meets the stringent requirements of the modern electronics industry, making it a reliable and cost-effective solution for designers seeking to optimize their circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8432 $59.0240
170+ $0.6918 $117.6060
260+ $0.6699 $174.1740
360+ $0.6480 $233.2800
465+ $0.6272 $291.6480
620+ $0.5625 $348.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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