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DMN26D0VT-7-F

Part No DMN26D0VT-7-F
Manufacturer Diodes Incorporated
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 252619-DMN26D0VT-7-F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN26D0VT-7-F CAD Model

Description

Overview of DMN26D0VT-7-F - Diodes Incorporated

The DMN26D0VT-7-F from Diodes Incorporated is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed for use in a wide range of electronic applications. This compact and efficient MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and innovation.

Key Features

  • Device Type: Dual N-Channel MOSFET
  • Configuration: Common Drain
  • Package: SOT-563, a small surface-mount package that is ideal for space-constrained applications.
  • Drain-Source Voltage (V<sub>DS): 20V, providing a good balance between performance and robustness for a variety of circuits.
  • Continuous Drain Current (I<sub>D): 540 mA, allowing for considerable current flow through the device during operation.
  • Gate-Source Voltage (V<sub>GS): ±8V, ensuring stable operation under a range of gate driving conditions.
  • R<sub>DS(on): Low on-resistance, which minimizes power loss and improves efficiency in power management applications.
  • Fast Switching Speed: Enables high-speed circuit operation, which is critical for modern high-frequency electronic devices.

Applications

The DMN26D0VT-7-F is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • Load Switching
  • Battery Management Systems
  • DC-DC Converters
  • Portable Devices
  • Motor Control Systems

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMN26D0VT-7-F MOSFET is manufactured with stringent quality control processes, ensuring reliability and performance consistency. It is designed to meet the requirements of various industrial standards, making it suitable for use in both commercial and industrial applications.

Environmental Compliance

The DMN26D0VT-7-F is environmentally friendly and compliant with RoHS (Restriction of Hazardous Substances) directives, meaning it is free from certain harmful materials commonly used in the electronics industry. This compliance reflects Diodes Incorporated's dedication to environmental sustainability and the production of eco-friendly products.

For engineers and designers looking for a reliable dual N-channel MOSFET with a common drain configuration, the DMN26D0VT-7-F offers a compelling combination of performance, efficiency, and compact form factor, making it an excellent choice for a wide range of electronic designs.

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