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DMN4031SSDQ-13

Part No DMN4031SSDQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 5.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 31 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18.6nC @ 10V
Max Input Capacitance 945pF @ 20V
Maximum Power Dissipation 1.42W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033774-DMN4031SSDQ-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN4031SSDQ-13 CAD Model

Description

Introducing the DMN4031SSDQ-13 MOSFET from Diodes Incorporated

The DMN4031SSDQ-13 is a high-performance, dual N-Channel enhancement mode field effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is a testament to Diodes Incorporated's commitment to providing state-of-the-art power management solutions for a wide array of electronic applications.

Key Features and Benefits

  • Low On-Resistance: The DMN4031SSDQ-13 features a low on-resistance, which ensures minimal power loss and high efficiency in operation, making it ideal for power-sensitive applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency circuits, reducing switching losses and improving overall performance.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for compact circuit designs, providing designers with the flexibility to create more efficient and space-saving layouts.
  • PowerDI3333-8 Package: Enclosed in a PowerDI3333-8 package, the DMN4031SSDQ-13 offers a small form factor without compromising on power handling and thermal performance.
  • RoHS Compliant: Compliance with the Restriction of Hazardous Substances (RoHS) directive ensures that the DMN4031SSDQ-13 is environmentally friendly and suitable for use in green products.

Applications

The DMN4031SSDQ-13 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Systems

Technical Specifications

Some of the technical specifications of the DMN4031SSDQ-13 include:

  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 8.5A
  • Power Dissipation (P<sub>D): 2.5W
  • Operating Temperature Range: -55°C to +150°C

Conclusion

With its robust performance and compact packaging, the DMN4031SSDQ-13 MOSFET from Diodes Incorporated provides an excellent solution for designers looking to optimize their power management systems. Its compliance with environmental standards and its ability to cater to a diverse range of applications make it a valuable component in the modern electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3439 $51.5850
315+ $0.3221 $101.4615
485+ $0.3112 $150.9320
695+ $0.2895 $201.2025
900+ $0.2786 $250.7400
1,125+ $0.2677 $301.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,578 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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