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DMT10H009LFG-13

Part No DMT10H009LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A/50A PWRDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 13A (Ta), 50A (Tc) 2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT10
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869106-DMT10H009LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT10H009LFG-13 CAD Model

Description

Introducing the DMT10H009LFG-13 MOSFET from Diodes Incorporated

The DMT10H009LFG-13 is a state-of-the-art MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to cater to the needs of modern electronics, offering high efficiency, reliability, and performance for a variety of applications.

Key Features

  • Low On-Resistance: The DMT10H009LFG-13 features a very low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: This MOSFET is capable of high-speed switching operations, making it suitable for high-frequency applications such as power supplies, converters, and motor drives.
  • PowerDI®5060-8 Package: Enclosed in the proprietary PowerDI®5060-8 package, the DMT10H009LFG-13 ensures a compact footprint while providing excellent thermal performance and reliability.
  • Low Gate Charge: With a low total gate charge (Q<sub>G), this device enables efficient switching performance, which is critical in reducing switching losses in power conversion systems.

Applications

The DMT10H009LFG-13 is ideal for a wide range of applications, including but not limited to:

  • DC-DC Converters
  • Power Management Systems
  • Motor Control Circuits
  • Computing and Server Power Supplies
  • Telecommunication Equipment

Technical Specifications

The DMT10H009LFG-13 boasts impressive technical specifications that make it a top choice for engineers and designers:

  • Drain-Source Voltage (V<sub>DSS): 100V
  • Continuous Drain Current (I<sub>D): 46A
  • Pulsed Drain Current (I<sub>DM): 184A
  • Power Dissipation (P<sub>D): 88W
  • Operating Temperature Range: -55°C to +150°C

With its robust design and superior performance characteristics, the DMT10H009LFG-13 MOSFET from Diodes Incorporated is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Its compact size, combined with its power handling capabilities, makes it a versatile component for a multitude of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8113 $60.8475
175+ $0.6657 $116.4975
270+ $0.6450 $174.1500
375+ $0.6242 $234.0750
480+ $0.6033 $289.5840
645+ $0.5409 $348.8805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,320 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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