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DMTH6004SPSQ-13

Part No DMTH6004SPSQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A PWRDI5060 / N-Channel 60 V 25A (Ta), 100A (Tc) 2.1W (Ta), 167W (Tc) Surface Mount PowerDI5060-8
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A, 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4556 pF @ 30 V
Power Dissipation (Max) 2.1W, 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package PowerDI5060-8
Case / Package 8-PowerTDFN
Base Product Number DMTH6004
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH6004SPSQ-13DITR,DMTH6004SPSQ-13DICT,DMTH6004SPSQ-13DIDKR
Standard Package 2,500
Win Source Part Number 1323911-DMTH6004SPSQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH6004SPSQ-13 CAD Model

Description

Product Overview: DMTH6004SPSQ-13

The DMTH6004SPSQ-13 is a high-performance, surface-mount MOSFET from Diodes Incorporated, renowned for their innovative approach in semiconductor design. This particular product is a testament to their commitment to providing energy-efficient and compact solutions for power management applications.

Key Features

  • Device Type: MOSFET
  • Configuration: Dual N-Channel
  • Material: Silicon
  • Package / Case: PowerDI®5060-8
  • Mounting Type: Surface Mount
  • Continuous Drain Current (ID): 12 A
  • Drain-Source Voltage (Vdss): 60 V
  • RDS(on): As low as 8.5 mOhms at Vgs = 10V
  • Maximum Operating Temperature: +150°C
  • RoHS Compliant: Yes

Applications

The DMTH6004SPSQ-13 is ideal for a variety of applications where high efficiency and power density are required. It is particularly suited for synchronous rectification in AC-DC and DC-DC converters, motor drive controls, and power management tasks in consumer electronics, computing, and telecom infrastructure.

Performance and Quality

This dual N-Channel MOSFET is designed to deliver low on-resistance and high switching performance. The low gate charge and capacitances associated with the DMTH6004SPSQ-13 result in reduced switching losses, making it an excellent choice for high-frequency power switching. The product is built to meet the rigorous standards of Diodes Incorporated, ensuring high reliability and consistent performance. Its RoHS compliance means it meets environmental standards by avoiding the use of hazardous substances.

Easy Integration

The DMTH6004SPSQ-13 comes in a compact PowerDI®5060-8 package, which is designed for minimal footprint and easy integration into a variety of circuit boards. Its surface-mount design allows for efficient assembly in automated production lines, reducing manufacturing time and costs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7806 $50.7390
160+ $0.6405 $102.4800
245+ $0.6205 $152.0225
335+ $0.6005 $201.1675
435+ $0.5805 $252.5175
580+ $0.5204 $301.8320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,150 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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