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DMTH8012LPSQ-13

Part No DMTH8012LPSQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 10A PWRDI5060
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 39 Weeks
Features N-Channel 80 V 10A (Ta), 72A (Tc) 2.6W (Ta), 136W (Tc) Surface Mount PowerDI5060-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package PowerDI5060-8
Family Name DMTH8012
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH8012LPSQ-13DICT, DMTH8012LPSQ-13DITR, DMTH8012LPSQ-13-ND, DMTH8012LPSQ-13DIDKR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869207-DMTH8012LPSQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH8012LPSQ-13 CAD Model

Description

DMTH8012LPSQ-13 MOSFET by Diodes Incorporated

The DMTH8012LPSQ-13 from Diodes Incorporated is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed for power management applications. This component is a part of the extensive MOSFET product line that Diodes Incorporated offers, which is known for its reliability, efficiency, and performance.

Key Features

  • Low On-Resistance: This MOSFET features low on-resistance (R<sub>DS(on)), which reduces conduction losses and enhances overall efficiency, making it ideal for high-efficiency power management designs.
  • High Power Density: The DMTH8012LPSQ-13 is housed in a compact PowerDI5060-8 package, which allows for a smaller footprint and higher power density in circuit designs.
  • Dual N-Channel Configuration: The dual N-channel setup enables the use of two MOSFETs in a single package, simplifying the design and reducing the component count on the PCB.
  • High Continuous Drain Current: It offers a high continuous drain current (I<sub>D), providing the capability to handle high-current applications with ease.
  • Fast Switching Speed: With its fast switching characteristics, the DMTH8012LPSQ-13 ensures minimal switching losses, which is crucial for applications requiring high-frequency operation.

Applications

The DMTH8012LPSQ-13 is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Circuits
  • Motor Control Systems
  • Battery Management Systems
  • Load Switches
  • Computing and Server Systems

Product Specifications

With a maximum drain-source voltage (V<sub>DSS) of 80V and a maximum gate-source voltage (V<sub>GSS) of ±20V, the DMTH8012LPSQ-13 ensures durability and stable operation under various conditions. The operating temperature range of -55°C to +150°C allows for performance in extreme environments, making it suitable for industrial and automotive applications as well.

For designers and engineers looking for a reliable MOSFET solution that combines efficiency with high power handling, the DMTH8012LPSQ-13 from Diodes Incorporated is an excellent choice. Its advanced features and robust package design ensure top-notch performance for a wide array of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6777 $50.8275
180+ $0.5561 $100.0980
280+ $0.5387 $150.8360
385+ $0.5214 $200.7390
500+ $0.5040 $252.0000
665+ $0.4518 $300.4470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,005 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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