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DVRN6056-7-F

Part No DVRN6056-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SOT-26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN + Zener Diode (Isolated)
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Win Source Part Number 080846-DVRN6056-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DVRN6056-7-F CAD Model

Description

Introducing the DVRN6056-7-F from Diodes Incorporated

The DVRN6056-7-F is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is engineered to deliver efficient power control and is housed in a compact SOT-23 package, making it ideal for space-constrained applications.

Key Features and Benefits

  • Low On-Resistance: The DVRN6056-7-F boasts an impressively low on-resistance, which minimizes power loss and improves efficiency, making it suitable for high-performance power management tasks.
  • High-Speed Switching: With its fast switching capabilities, this dual N-channel MOSFET can operate efficiently at high frequencies, which is essential for modern electronic applications requiring quick response times.
  • Dual MOSFET Configuration: The integration of two MOSFETs in a single package not only saves space but also simplifies the design and reduces the component count in circuits.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with low-voltage logic signals and helping to reduce overall power consumption.
  • RoHS Compliant: The DVRN6056-7-F is RoHS compliant, adhering to environmental standards by avoiding the use of hazardous substances in its construction.

Applications

The DVRN6056-7-F is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Motor Control Systems

Quality and Reliability

Diodes Incorporated is renowned for its commitment to quality and reliability, and the DVRN6056-7-F is no exception. It is designed and manufactured to meet the high standards expected by industry professionals, ensuring stable performance and longevity in a range of operating conditions.

Whether you are developing power management systems, designing portable electronics, or working on motor control applications, the DVRN6056-7-F offers a reliable and efficient solution for your dual N-channel MOSFET needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2083 $51.0335
585+ $0.1710 $100.0350
910+ $0.1656 $150.6960
1,250+ $0.1603 $200.3750
1,615+ $0.1549 $250.1635
2,160+ $0.1389 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,007 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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