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FMMT6517TA

Part No FMMT6517TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 0.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 350V
Max Vce (sat) 1V @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 20 @ 50mA, 10V
Maximum Power Dissipation 330mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 016344-FMMT6517TA
Family Name FMMT6517
Introduction Date October 27, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMMT6517TA CAD Model

Description

Introducing the FMMT6517TA - A High-Performance PNP Transistor

The FMMT6517TA, crafted by the reputable Diodes Incorporated, is a cutting-edge PNP transistor that promises efficiency and reliability for a wide array of electronic applications. This bipolar junction transistor is designed to meet the demands of modern circuitry, providing a perfect blend of high speed and low power loss, making it an ideal choice for designers and engineers looking to enhance their systems.

Key Features and Benefits

  • High Current Capability: The FMMT6517TA is capable of handling continuous collector currents up to -1 A, making it suitable for high-power applications.
  • Low Saturation Voltage: With a low collector-emitter saturation voltage of typically -0.1 V at -500 mA, this transistor ensures efficient operation with minimal power dissipation.
  • Fast Switching Speed: Its fast switching times are ideal for high-frequency applications, providing quick response times that are essential in today's fast-paced electronic environments.
  • High hFE: The high DC current gain (hFE) of up to 500 at -500 mA ensures that the transistor can amplify weak signals effectively, making it perfect for audio amplifiers and signal processing circuits.
  • Robust Thermal Performance: The FMMT6517TA is encapsulated in a SOT-23 package, which offers excellent thermal performance and helps in maintaining stability under varying operational conditions.

Applications

The versatility of the FMMT6517TA allows it to be used in a diverse range of applications, including but not limited to:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Switching regulators
  • Driver stages in hi-fi amplifiers and television circuits

Product Specifications

With a collector-base voltage (VCBO) of -60 V and a collector-emitter voltage (VCEO) of -60 V, the FMMT6517TA can withstand significant voltage levels, ensuring durability and long-term performance. The operating and storage junction temperature range from -55°C to +150°C, providing resilience in extreme conditions.

Diodes Incorporated's commitment to quality is evident in the FMMT6517TA, which is designed to not only meet but exceed the expectations of the most demanding electronic designs. Whether you're developing power supplies, amplifiers, or any other application that requires a reliable PNP transistor, the FMMT6517TA is a component you can trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1666 $50.8130
735+ $0.1367 $100.4745
1,135+ $0.1324 $150.2740
1,565+ $0.1282 $200.6330
2,020+ $0.1239 $250.2780
2,705+ $0.1111 $300.5255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,420 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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