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MMBT2222A-7-F

Part No MMBT2222A-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SMD SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 310mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023729-MMBT2222A-7-F
Family Name MMBT2222A
Introduction Date May 16, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Defence, Military & Aerospace, Power Management
Ultra Librarian 3D Model Ultra Librarian MMBT2222A-7-F CAD Model

Description

The MMBT2222A-7-F is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplifier and switching applications. This versatile transistor is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained applications.

Key Features

  • Transistor Type: The MMBT2222A-7-F is an NPN transistor, which is widely used for amplification and switching purposes.
  • High Current Gain: With a DC current gain (hFE) range, this component ensures efficient current amplification.
  • Power Dissipation: It can dissipate a reasonable amount of power, which is sufficient for a wide range of electronic applications.
  • Voltage Ratings: It supports a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) that are suitable for general-purpose applications.
  • High-Speed Switching: The MMBT2222A-7-F is designed for fast switching operations, which is crucial for high-frequency circuits.
  • Temperature Performance: It operates effectively over a broad temperature range, ensuring reliability in various environmental conditions.

Applications

The MMBT2222A-7-F transistor is versatile and can be used in a multitude of applications, including but not limited to:

  • Signal Amplification
  • Power Management Circuits
  • Linear Amplification and Switching
  • Motor Control
  • Relay Drivers

Quality and Reliability

Diodes Incorporated ensures that the MMBT2222A-7-F meets stringent quality standards. The device is RoHS compliant, indicating that it is manufactured without hazardous substances, making it suitable for use in environmentally sensitive applications. Additionally, the component is characterized for operation from -55°C to +150°C, which demonstrates its reliability in extreme conditions.

Conclusion

The MMBT2222A-7-F from Diodes Incorporated is a robust and reliable NPN transistor that offers excellent performance for a wide range of electronic applications. Its compact form factor, combined with its high current gain and fast switching capabilities, make it a preferred choice for designers and engineers looking to optimize their circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,170+ $0.0428 $50.0760
2,495+ $0.0401 $100.0495
3,870+ $0.0388 $150.1560
5,560+ $0.0360 $200.1600
7,205+ $0.0347 $250.0135
9,010+ $0.0333 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 191,000 pieces
MOQ: 1170 pcs
Order Increment : 1 pcs
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