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MMBT4403T-7-F

Part No MMBT4403T-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.6A SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 150mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 023768-MMBT4403T-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT4403T-7-F CAD Model

Description

Diodes Incorporated MMBT4403T-7-F PNP Transistor

The MMBT4403T-7-F from Diodes Incorporated is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Encapsulated in a compact SOT-523 package, this transistor is suitable for automated surface mount assembly, making it an ideal choice for space-constrained applications.

Key Features:

  • Type: PNP
  • Package: SOT-523
  • Collector-Emitter Voltage (Vceo): 40V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE): 100 to 300
  • Transition Frequency (fT): 100MHz
  • Operating Junction Temperature Range: -55°C to +150°C
  • Moisture Sensitivity Level (MSL): 1
  • RoHS Compliant: Yes

The MMBT4403T-7-F transistor offers excellent linearity and high gain, making it suitable for amplification of analog signals. With a collector-emitter voltage of 40V and a collector current of 600mA, it can handle moderate power applications with ease. The device also boasts a high transition frequency of 100MHz, which allows for efficient operation in high-speed switching circuits.

This transistor is designed to meet the stringent requirements of modern electronic equipment. With its low on-state voltage drop and minimal saturation voltage, it ensures high efficiency and low thermal dissipation. The high DC current gain (hFE) range of 100 to 300 provides stable operation over a wide range of operating conditions.

The MMBT4403T-7-F is also characterized by its robustness, capable of withstanding harsh operating environments with a junction temperature range of -55°C to +150°C. Its moisture sensitivity level of 1 indicates that it has superior resistance to moisture ingress, which is critical for reliability in humid conditions.

As a RoHS compliant product, the MMBT4403T-7-F meets environmental standards, reducing hazardous substances in electronics. This makes it an environmentally friendly choice for manufacturers looking to create green products.

In summary, the MMBT4403T-7-F PNP transistor from Diodes Incorporated is a versatile and reliable component that offers excellent performance for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0590 $50.1500
2,070+ $0.0484 $100.1880
3,200+ $0.0469 $150.0800
4,410+ $0.0454 $200.2140
5,695+ $0.0439 $250.0105
7,615+ $0.0394 $300.0310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,608 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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