The FDB24AN06LAO is an N-Channel enhancement mode power MOSFET from Fairchild Semiconductor (now ON Semiconductor). This MOSFET is designed for applications requiring high efficiency and low on-resistance.

Applications

• Synchronous rectification in AC/DC and DC/DC converters
• Power management in desktop computers, servers, and notebooks
• Motor control applications
• Uninterruptible power supplies (UPS)
• Load switch

Features

• Low on-resistance (RDS(on)) to minimize conduction losses
• High current capability
• Fast switching speed for improved efficiency
• Low gate charge (Qg)
• Avalanche energy rated
• RoHS compliant

Benefits

• Improved energy efficiency due to reduced conduction and switching losses
• Higher system reliability due to robust avalanche performance
• Simplified thermal management due to low RDS(on)
• Reduced component count due to integrated features
• Environmentally friendly due to RoHS compliance

Additional Details

The FDB24AN06LAO features a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of up to 50A (depending on the case temperature). The typical on-resistance (RDS(on)) at VGS = 10V is very low, contributing to minimal power dissipation. This MOSFET is typically supplied in a TO-263 (D2PAK) package for efficient heat dissipation. Its low gate charge optimizes drive power requirements.

It is designed to operate over a wide temperature range. This device is particularly well-suited for synchronous rectification in switched-mode power supplies due to its low on-resistance and fast switching characteristics, improving overall system efficiency. Its use contributes to achieving compliance with energy efficiency standards.