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FDD3706NL

Part No FDD3706NL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1058774-FDD3706NL
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDD3706NL CAD Model

Description

The FDD3706NL is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed for high-efficiency switching applications. This MOSFET is known for its low on-resistance and fast switching speed, contributing to improved power conversion efficiency.

Applications

  • Synchronous Rectification in DC-DC converters
  • Notebook Adapters
  • Point-of-Load (POL) Converters
  • Battery Management Systems
  • Power Tools

Features

  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Minimizes switching losses.
  • Logic Level Gate Drive: Allows direct drive from logic circuits.
  • Avalanche Rated: Provides added ruggedness and reliability.
  • RoHS Compliant

Benefits

  • Increased Efficiency: Low on-resistance and fast switching speed lead to higher power conversion efficiency.
  • Reduced System Size: High efficiency allows for smaller heat sinks and overall system size reduction.
  • Improved Reliability: Avalanche rating provides added protection against voltage transients.
  • Simplified Design: Logic-level gate drive simplifies the gate drive circuitry.

Specifications

The FDD3706NL typically features a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of around 16A, and an on-resistance (RDS(on)) of approximately 6.5 mΩ at VGS = 10V. It is available in a Power33 package. These specifications can vary slightly, so always consult the datasheet for the most accurate and up-to-date information. The gate threshold voltage is typically between 1V and 3V, making it suitable for logic-level driving. The device also exhibits a low gate charge, which further contributes to its fast switching performance. The maximum power dissipation is dependent on the thermal management of the application. Proper heatsinking is recommended to maintain device performance and reliability.

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