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Same model may have multiple batches, images only for reference.
FDD5N50TF_WS Real Image
Same model may have multiple batches, images only for reference.

FDD5N50TF_WS

Part No FDD5N50TF_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4A DPAK
Datasheet
FDD5N50TF_WS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038079-FDD5N50TF_WS
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FDD5N50TF_WS CAD Model

Description

The Fairchild/ON Semiconductor FDD5N50TF_WS is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 500V and a Continuous Drain Current of 4A @ 25°C.

  • Maximum Rds On: 1.4 Ohm @ 2A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 15nC @ 10V
  • Max Input Capacitance: 640pF @ 25V
  • Package: D-Pak with a TO-252-3, DPak (2 Leads + Tab), SC-63 dimension
  • Lifecycle Status: Obsolete and has an EOL status
  • Commonly used in: Discrete Semiconductor Products
  • Popularity: Medium
  • Package Contains: 2k pcs

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