FQB16N25CTM

Part No FQB16N25CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 15.6A D2PAK / Trans MOSFET N-CH 250V 15.6A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250ÎĽA
Gate Charge (Qg) (Maximum) @ Vgs 53.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1080pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 139W (Tc)
Rds On (Maximum) @ Id, Vgs 270 mOhm @ 7.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774711-FQB16N25CTM
Popularity Medium
Supply and Demand Status Limited
Family Name FQB16N25C
Introduction Date March 16, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Win Source Part Number IRF634NSTRLPBF; STB16NS25;   STB8NS25T4; IRF634NS; 

Description

The Fairchild/ON Semiconductor FQB16N25CTM is a MOSFET electronic component that is part of the QFET series. This product is obsolete and has a limited supply and demand status. The product has a family name of FQB16N25C and is part of the discrete semiconductor products category. The product has a drive voltage of 10V and a maximum gate voltage of ±30V. The maximum power dissipation of the product is 3.13W (Ta), 139W (Tc). The product has an introduction date of March 16, 2004 and an estimated EOL date of obsolete/end of life.

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