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FDFMA2P853T

Part No FDFMA2P853T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A 6-MICROFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 435pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MicroFET 2x2 Thin
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1038136-FDFMA2P853T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDFMA2P853T CAD Model

Description

The Fairchild/ON Semiconductor FDFMA2P853T is a P-Channel MOSFET with a Schottky Diode (Isolated) feature.

  • Category: Discrete Semiconductor Products
  • Mounting: SMD (SMT)
  • Power Dissipation: 1.4W (Ta)
  • Drive Voltage: 1.8V (Max Rds On) and 4.5V (Min Rds On)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3A (Ta)
  • Gate-Source Threshold Voltage: 1.3V @ 250μA
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Input Capacitance: 435pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Package: MicroFET 2x2 Thin, 6-UDFN Exposed Pad

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3477 $59.1090
405+ $0.2853 $115.5465
630+ $0.2760 $173.8800
870+ $0.2668 $232.1160
1,120+ $0.2587 $289.7440
1,495+ $0.2322 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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