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FDS6912A

Part No FDS6912A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 28 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 8.1nC @ 5V
Max Input Capacitance 575pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 016178-FDS6912A
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name FDS6912A
Introduction Date June 29, 1998
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6912A CAD Model

Description

The Fairchild/ON Semiconductor FDS6912A is a dual N-Channel MOSFET that is commonly used in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 8.1nC @ 5V
  • Maximum Input Capacitance: 575pF @ 15V
  • Maximum Rds On: 28 mOhm @ 6A, 10V
  • Package: 8-SO
  • Supply and Demand Status: Balanced
  • Halogen-Free: Yes
  • EAR99: Yes
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7121 $53.4075
175+ $0.5843 $102.2525
265+ $0.5661 $150.0165
370+ $0.5478 $202.6860
475+ $0.5296 $251.5600
635+ $0.4748 $301.4980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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