The Fairchild/ON Semiconductor FQB14N30TM is an N-channel MOSFET transistor with a drain-source breakdown voltage of 300V and a continuous drain current of 14.4A at 25°C. It has a maximum Rds On of 290 mOhm at Id,Vgs of 7.2A, 10V and a maximum gate-source voltage of ±30V. This MOSFET transistor has a gate-source threshold voltage of 5V @ 250μA, and a max gate charge of 40nC @ 10V. It has a max input capacitance of 1360pF @ 25V and is packaged in a D2PAK (TO-263AB) case.

• Drain-Source Breakdown Voltage: 300V
• Continuous Drain Current (25°C): 14.4A
• Max Rds On at Id,Vgs: 290 mOhm @ 7.2A, 10V
• Maximum Gate-Source Voltage: ±30V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Max Gate Charge: 40nC @ 10V
• Max Input Capacitance: 1360pF @ 25V
• Case/Package: D2PAK (TO-263AB)