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Same model may have multiple batches, images only for reference.
FQD7P20TF Real Image
Same model may have multiple batches, images only for reference.

FQD7P20TF

Part No FQD7P20TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 5.7A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 690 mOhm @ 2.85A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039779-FQD7P20TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD7P20TF CAD Model

Description

The Fairchild/ON Semiconductor FQD7P20TF is a P-channel MOSFET transistor designed for use in discrete semiconductor products. Fairchild/ON Semiconductor

  • Power Dissipation: 2.5W (Ta), 55W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 5.7A (Tc) @ 25°C
  • Gate Charge: 25nC @ 10V
  • Rds On (Max): 690 mOhm @ 2.85A, 10V
  • Mounting: SMD (SMT)
  • Package: D-Pak package
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
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