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Same model may have multiple batches, images only for reference.
FQP30N06L Real Image
Same model may have multiple batches, images only for reference.

FQP30N06L

Part No FQP30N06L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1040pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 006024-FQP30N06L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP30N06L CAD Model

Description

The Fairchild/ON Semiconductor FQP30N06L is a MOSFET transistor with N-channel polarity.

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 32A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Maximum Input Capacitance: 1040pF @ 25V
  • Package: TO-220AB
  • Ideal for: Discrete semiconductor products

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