The FQU10N65C is an N-Channel SuperFET® MOSFET from Fairchild/ON Semiconductor. This MOSFET utilizes advanced technology to achieve low on-resistance and gate charge, offering exceptional performance in high-voltage, high-frequency switching applications.

Applications:

• Switch-Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• High-Voltage DC-DC converters
• Plasma Display Panels (PDP)
• Lighting ballasts

Features:

• 650V Drain-Source Voltage (VDS)
• Low On-Resistance: RDS(on) = 0.55 Ohm (Max) @ VGS = 10V
• Low Gate Charge (Qg): 20 nC (Typical)
• Low Effective Output Capacitance (Coss)
• Improved dv/dt Capability
• 100% Avalanche Tested

Benefits:

• High efficiency in power conversion
• Reduced switching losses
• Simplified thermal management
• Improved system reliability
• Higher power density

Additional Details:

The FQU10N65C is available in a TO-251 (I-PAK) package. It provides robust performance in demanding applications. The device offers fast switching speeds and low gate drive requirements, simplifying the design process. The maximum drain current is 10A. Its avalanche capability ensures that it can withstand transient voltage spikes, further enhancing system reliability. The operating temperature range is -55°C to +150°C. The device is also RoHS compliant.