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Same model may have multiple batches, images only for reference.
HUF75309T3ST Real Image
Same model may have multiple batches, images only for reference.

HUF75309T3ST

Part No HUF75309T3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 3A SOT-223
Datasheet
HUF75309T3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 20V
Max Input Capacitance 352pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1044180-HUF75309T3ST
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian HUF75309T3ST CAD Model

Description

The Fairchild/ON Semiconductor HUF75309T3ST is an N-Channel MOSFET transistor that can handle a maximum power dissipation of 1.1W (Ta) and a continuous drain current of 3A (Ta).

  • Channel Type: N-Channel MOSFET
  • Maximum Power Dissipation: 1.1W (Ta)
  • Continuous Drain Current: 3A (Ta)
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 3A, 10V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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