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Same model may have multiple batches, images only for reference.
HUF76139P3 Real Image
Same model may have multiple batches, images only for reference.

HUF76139P3

Part No HUF76139P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Power Dissipation (Max) 165W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 293 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149033-HUF76139P3
Ultra Librarian 3D Model Ultra Librarian HUF76139P3 CAD Model

Description

The 156214 is a MOSFET transistor used in single FET applications. It is an N-Channel type transistor.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 75A at 25°C
  • Maximum On-Resistance: 7.5mOhm at 75A and 10V Vgs
  • Gate-Source Threshold Voltage: 3V at 250μA
  • Maximum Power Dissipation: 165W at 25°C
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Gate Charge: 78nC at 10V Vgs
  • Input Capacitance: 2700pF at 25V Vds
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -40°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active

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