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MB81C4256A-60P

Part No MB81C4256A-60P
Manufacturer Fujitsu Electronics America, Inc.
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package PDIP
RoHS Non-Compliant
Win Source Part Number 1076047-MB81C4256A-60P
Categories OEM Parts(M-N)
Manufacturer Fujitsu Electronics America, Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MB81C4256A-60P CAD Model

Description

The MB81C4256A-60P is a 262,144-word by 4-bit CMOS Dynamic Random Access Memory (DRAM) manufactured by Fujitsu. It's designed for high-density memory applications requiring fast access times and low power consumption.

Applications

  • Personal Computers: Used in older PC systems as main memory or in graphics cards.
  • Workstations: Found in workstation environments needing reliable memory for complex calculations.
  • Graphics Cards: Integrated into graphics cards as frame buffer memory.
  • Printers: Employed as buffer memory to manage printing processes efficiently.
  • Industrial Control Systems: Used in industrial automation equipment where data storage is crucial.

Features

  • Organization: 262,144 words x 4 bits, offering higher bandwidth compared to x1 configurations.
  • Access Time: 60ns access time, providing fast data retrieval.
  • Refresh: Requires periodic refresh cycles to maintain data integrity.
  • Power Consumption: Low power consumption due to CMOS technology, ideal for battery-powered applications.
  • Package: Typically available in a DIP (Dual In-line Package) for easy integration.

Benefits

  • High Density: Provides a significant amount of memory in a small package.
  • Fast Access: 60ns access time enables quicker data access, enhancing system performance.
  • Low Power: CMOS technology ensures minimal power consumption, beneficial for portable devices.
  • Increased Bandwidth: x4 organization allows for faster data transfer rates.
  • Reliable Performance: Offers stable and dependable memory operation.

Additional Details

The MB81C4256A-60P utilizes multiplexed address inputs to reduce pin count. It incorporates a robust sense amplifier to reliably detect and amplify signals stored in the memory cells. Regular refresh cycles are necessary to preserve the data, compensating for charge leakage. The operating temperature range is typically between 0°C and 70°C. This DRAM was a key component in numerous electronic systems, enabling efficient and reliable memory operations.

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