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Same model may have multiple batches, images only for reference.
G06P01E
Same model may have multiple batches, images only for reference.

G06P01E

Part No G06P01E
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P12V,RD(MAX)<[email protected],RD(MAX)<4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 28mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1087 pF @ 6 V
FET Feature -
Power Dissipation (Max) 1.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376862-G06P01E
Ultra Librarian 3D Model Ultra Librarian G06P01E CAD Model

Description

The 1376862-G06P01E is a P-Channel MOSFET transistor from Goford Semiconductor.

  • Category: Discrete Semiconductor Products - FETs, MOSFETs
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Vdss (Drain to Source Voltage): 12V
  • Id (Continuous Drain Current) @ 25°C: 4A
  • Vgs (Gate Voltage): ±10V
  • Qg (Gate Charge) @ 4.5V: 14nC
  • Rds On (Max) @ 3A, 4.5V: 28mOhm
  • Power Dissipation: 1.8W
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active
  • REACH Status: Unaffected

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