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Same model may have multiple batches, images only for reference.
RFA100N05E
Same model may have multiple batches, images only for reference.

RFA100N05E

Part No RFA100N05E
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-218-5
Package / Case TO-218-5
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891647-RFA100N05E
Ultra Librarian 3D Model Ultra Librarian RFA100N05E CAD Model

Description

The RFA100N05E is a single N-channel MOSFET transistor from Harris Corporation.

  • Package: bulk
  • Standard Package: 1 piece
  • Mounting Type: through-hole
  • Package: TO-218-5
  • Vdss: 50V
  • Id: 100A @ 25°C
  • Rds On: 8mOhm @ 100A and 10V
  • Qg: 230nC @ 10V
  • Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1075 $52.8275
40+ $2.5497 $101.9880
61+ $2.4701 $150.6761
84+ $2.3904 $200.7936
109+ $2.3107 $251.8663
145+ $2.0717 $300.3965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,430 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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