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2SK1306

Part No 2SK1306
Manufacturer Hitachi, Ltd
Catalog Transistors - FETs, MOSFETs - RF
Description Silicon N-Channel MOS FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Hitachi, Ltd
Win Source Part Number 1126988-2SK1306
Manufacturer Homepage www.renesas.com/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1306 CAD Model

Description

The 2SK1306 is an N-channel power MOSFET designed for high-frequency power amplification. Manufactured by Hitachi, Ltd, this transistor is suitable for applications requiring high gain and efficiency, particularly in radio frequency (RF) amplifiers and switching power supplies. Its robust design and high-power handling capabilities make it a reliable choice for demanding applications.

Applications

  • RF Power Amplifiers
  • High-Frequency Inverters
  • Switching Power Supplies
  • Radio Transmitters
  • Industrial Heating Equipment

Features

  • N-Channel MOSFET
  • High Power Gain
  • Low Input Capacitance
  • High-Speed Switching
  • High Avalanche Energy Capability

Benefits

  • Efficient Power Amplification: Provides high power gain, enabling efficient amplification of RF signals and reducing power consumption.
  • Improved Switching Performance: High-speed switching capabilities minimize switching losses and improve the overall efficiency of power conversion circuits.
  • Enhanced Reliability: High avalanche energy capability provides robust protection against voltage spikes, enhancing the reliability and longevity of the device.
  • Optimized Thermal Performance: Designed for efficient heat dissipation, ensuring stable and reliable operation even under high-power conditions.
  • Versatile Application: Suitable for a wide range of high-frequency applications, including RF amplifiers, inverters, and power supplies.

Additional Details

The 2SK1306's key specifications typically include parameters such as drain-source voltage, gate-source voltage, drain current, and power dissipation. These parameters are crucial for designing circuits that operate within the transistor's safe operating area. The device also features a low gate charge, which contributes to its high-speed switching performance. Proper thermal management is essential for maximizing the performance and lifespan of the 2SK1306. Designers should consider using appropriate heat sinking techniques to ensure that the transistor remains within its specified operating temperature range. The combination of high power gain, fast switching speed, and robust design makes the 2SK1306 a valuable component for high-frequency power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $89.3912 $89.3912
2+ $86.5973 $173.1946
3+ $83.8033 $251.4099
4+ $81.0105 $324.0420
5+ $72.6299 $363.1495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
Order Increment : 1 pcs
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